Irfi640g datasheet


IRFI640G SiHFI640G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 9.8 TC = 100 °C 6.2 A Pulsed Drain Currenta IDM 39 Linear Derating Factor 0.32 W/°C Single Pulse Avalanche Energyb EAS 430 mJ IRFI644G Transistor Datasheet, IRFI644G Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog IRFI640G, SiHFI640G Vishay Siliconix Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. IRIS-A6351 Integrated Switcher Features. Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. www.vishay.com IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs • 18A, 200V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.180Ω power field effect transistors