2n2907 transistor datasheets


Dec 11, 2017 · 2N2222A is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. 2N2222A has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. The maximum amount of current ... The 2N2907 is a commonly available PNP bipolar junction transistor used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. This transistor was made by several manufacturers; Texas Instruments released a data sheet for their version of this part dated March 1973. An "A" suffix indicates a slightly higher breakdown voltage. These transistors have an enduring popularity w 2003 - 2n2907. Abstract: 2N2906 2N2906 equivalent data sheet transistor 2n2907 2N2907 application notes 2N2907 SO Text: 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , >20 >30 *Pulse Test: Pulse Width 300µs, Duty Cycle 2% µ 2N2906_2907Rev010303E, " 80K 34 kgs 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 3 of , email ... hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph. Figure 11. Current Gain 2N2907 High Speed Switching Transistor Page 1 31/05/05 V1.0 Features: • NPN silicon planar switching transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. Dec 11, 2017 · 2N2222A is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. 2N2222A has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. The maximum amount of current ...