Tph3006ps datasheet transphorm


Jul 27, 2013 · TPH3006PS. July 27, 2013, DA 1. TPH3006PS . www.transphormusa.com . Absolute Maximum Ratings (T. C =25 °C. unless otherwise stated) Symbol We have chosen TPH3006PS (Transphorm Inc., Goleta, CA, USA) in a TO-220 package as a benchmark to compare our cascade GaN FET fabricated in NCTU with TO-257 package as both transistors had similar voltage as well as current rating and were in similar lead frame packages. A brief datasheet of TPH3006PS 2014 is included in Appendix B Table A2 . We have chosen TPH3006PS (Transphorm Inc., Goleta, CA, USA) in a TO-220 package as a benchmark to compare our cascade GaN FET fabricated in NCTU with TO-257 package [19] as both transistors had similar voltage as well as current rating and were in similar lead frame packages. A brief datasheet of TPH3006PS 2014 is included in AppendixBTableA2[22]. Dec 01, 2016 · Transphorm GaN-on-Silicon HEMT TPH3206PS 2016 teardown reverse costing report published by Yole Developpement 1. DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems.